| Autor: |
R. Manuwald, Germain Bossu, A. Muhlhoff, Tianbing Chen, T. Nigam, D. Lipp, Wafa Arfaoui, M. Siddabathula |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
IRPS |
| DOI: |
10.1109/irps45951.2020.9129479 |
| Popis: |
Although technology scaling to deep submicron enable higher degrees of semiconductor integration, highly integrated circuit have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent technologies is the Hot Carrier Injection (HCI), a progressive wear out phenomenon whose understanding and modeling has become mandatory in new CMOS nodes. Therefore, we present in this paper a new HCI reliability model for Fully Depleted Silicon On Insulator (FDSOI) MOSFETs which covers the RF/mmWave (Radiofrequency /millimeter wave) applications taking into account back bias operation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
