Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements

Autor:	Mark Ray, S.H. Goodwin-Johansson, Hisham Z. Massoud, Yudong Kim
Rok vydání:	1992
Předmět:	Static secondary-ion mass spectrometry Materials science Silicon Resolution (mass spectrometry) Doping General Engineering Analytical chemistry chemistry.chemical_element Secondary ion mass spectrometry Lapping chemistry Condensed Matter::Superconductivity Boron Image resolution
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:369
ISSN:	0734-211X
DOI:	10.1116/1.586360
Popis:	Two‐dimensional doping profiles can be determined from multiple one‐dimensional secondary ion mass spectrometry (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as‐implanted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one‐dimensional SIMS measurements. Doping profiles of 0.4 μm boron junctions have been measured and reconstructed using the maximum likelihood estimation algorithm. Issues of sample alignment, SIMS depth resolution and SIMS sensitivity are discussed with respect to the application of this technique to sub 100 nm junctions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5def2f617e9715eee92a10d5b30b0089 https://doi.org/10.1116/1.586360 Zobrazit plný text záznamu