Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si
| Autor: | J. Gelpey, Dim-Lee Kwong, S. J. Lee, S. Marcus, C. H. Lee, A. Y. Mao, S. C. Song, H.F. Luan |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Diffusion barrier Oxide Analytical chemistry chemistry.chemical_element Equivalent oxide thickness Dielectric Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electrical and Electronic Engineering Boron Current density Nitriding |
| Zdroj: | Microelectronic Engineering. 48:55-58 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00337-8 |
| Popis: | In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH 3 nitridation of Si followed by in-situ N 2 O oxidation (NH 3 +H 2 O process). These films show excellent interface properties, significant lower leakage current (∼10 2 X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO 2 of identical equivalent oxide thickness (Tox,eq). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect