Metastable As‐concentrations in Si achieved by ion implantation and rapid thermal annealing

Autor:	A. Lietoila, J. F. Gibbons, Thomas W. Sigmon, J. M. Young, P. D. Scovell, R. B. Gold
Rok vydání:	1981
Předmět:	Materials science Dopant Annealing (metallurgy) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Recrystallization (metallurgy) Epitaxy Crystallography Ion implantation chemistry Metastability Solubility Arsenic
Zdroj:	Journal of Applied Physics. 52:230-232
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.328482
Popis:	Rapid thermal annealing (4 min at 560 °C) of implanted As in Si can electrically activate concentrations up to 5×1020 cm−3, which exceeds the solubility at that temperature. Prolonged thermal annealing at the same temperature causes deactivation of such metastable concentrations. The results suggest that when the amorphous‐crystalline interface is moving during solid phase epitaxial regrowth, dopants go to substitutional sites even in concentrations exceeding solubility. If solubility is exceeded, deactivation takes place after the material has recrystallized.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5dd23f20a808e38cf0050fe0f4ccd20f https://doi.org/10.1063/1.328482 Zobrazit plný text záznamu