Resistance switching and memory effects in solution-processed BiFeO3/LaNiO3junctions
| Autor: | Nirav C. Pandya, Utpal S. Joshi, A K Debnath |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Valence (chemistry) Materials science Nanostructure Acoustics and Ultrasonics business.industry Oxide Nanotechnology Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Electrode Optoelectronics Thin film 0210 nano-technology business Order of magnitude Voltage |
| Zdroj: | Journal of Physics D: Applied Physics. 49:055301 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/49/5/055301 |
| Popis: | Resistance switching and memory effects have been observed in a heterostructure consisting of BiFeO3 (BFO) on a LaNiO3 (LNO) conducting oxide bottom electrode fabricated by chemical solution deposition on quartz substrates. The phase purity and lattice strain of monodispersed thin film nanostructures were confirmed by XRD. Bipolar switching with a resistance switching ratio of one order of magnitude at small bias voltages of +1.3 V and −0.7 V for positive and negative bias respectively has been estimated from the I–V traces measured over a span of more than 6 h. Excellent retention behavior of the BFO–LNO device is confirmed for its possible use as a non-volatile resistance random access memory device. The modeling of the I–V data suggests that in the low resistance state (on) Ohmic conduction is well fitted, whereas in the high resistance state (off) the trap-controlled space-charge-limited current mechanism dominates. The observed resistive switching (RS) is attributed to formation of a metallic filament and its rupture under electric stress conditions. The valence states of Fe ions in the fabricated device structures indicate that oxygen vacancies could also lead to RS in the device. |
| Databáze: | OpenAIRE |
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