Electron mobility in p‐type GaAs
| Autor: | W. P. Dumke, S. L. Wright, K. A. Jenkins, Sandip Tiwari, K. Wrenner, M. I. Nathan |
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| Rok vydání: | 1988 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 52:654-656 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.99395 |
| Popis: | The mobility of electrons in p‐type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm−3. At 77 K, μPn =6000 cm2/(V s). The room‐temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n‐type material. |
| Databáze: | OpenAIRE |
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