Quantum Hall effect in n-InGaAs/InAlAs metamorphic nanoheterostructures with high InAs content
| Autor: | I. S. Vasil’evskii, S. M. Podgornykh, M. V. Yakunin, A. N. Vinichenko, Krzysztof Rogacki, N. G. Shelushinina, Yurii G. Arapov, V. N. Neverov, S. V. Gudina, Alexander Savelyev |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics Condensed matter physics Landau quantization Quantum Hall effect Conductivity Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Magnetic field Delocalized electron Quantum spin Hall effect 0103 physical sciences 010306 general physics Critical exponent Quantum well |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 440:10-12 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2016.12.111 |
| Popis: | For an investigation of the quantum Hall effect on n-In0.85Ga0.18As/In0.82Al0.82As metamorphic nanoheterostructures with high InAs content the longitudinal and Hall magnetoresistances were measured in magnetic fields up to 9 T at T = ( 1.8 ÷ 30 ) K . The results for a temperature dependence of conductivity on the delocalized states at the center of Landau level were analysed within the scaling concept for a plateau-plateau transition in quantum Hall regime. |
| Databáze: | OpenAIRE |
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