Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

Autor:	S. P. Timoshenkov, Sergey Kozyukhin, V. M. Novotortsev, Alexey Sherchenkov
Rok vydání:	2011
Předmět:	Random access memory Materials science Chalcogenide General Engineering Nanotechnology Condensed Matter Physics Phase-change material Flash memory Amorphous solid Phase-change memory chemistry.chemical_compound Phase change chemistry General Materials Science Static random-access memory
Zdroj:	Nanotechnologies in Russia. 6:227-236
ISSN:	1995-0799 1995-0780
DOI:	10.1134/s1995078011020121
Popis:	Chalcogenide alloys in the Ge-Sb-Te system are examined from the point of view of their application in nonvolatile phase-change random-access memory (PC RAM). An analysis of the physicochemical properties of crystalline compounds and amorphous films on their basis is carried out.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5daac6a78bebf21ad56e009734012bce https://doi.org/10.1134/s1995078011020121 Zobrazit plný text záznamu Full text from SpringerLink