Growth and characterization of calcium fluoride on (100) and (111) silicon substrates
| Autor: | A K M M Haque, L K Howard |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Silicon Scanning electron microscope business.industry Chemistry Analytical chemistry chemistry.chemical_element Crystal growth Substrate (electronics) Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Optics Materials Chemistry Fluorine Electrical and Electronic Engineering Thin film business Inorganic compound |
| Zdroj: | Semiconductor Science and Technology. 7:1316-1324 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Epitaxial films of CaF2 have been grown on Si(100) and Si(111). The substrate temperatures required for epitaxy, determined by Rutherford backscattering of 340 keV protons, are compared with those previously reported, as are the results of examination of the surface morphologies by scanning electron microscopy. Initial investigations of the electrical properties of the insulating films are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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