Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy
| Autor: | Yuichi Aoki, Masahiro Watanabe, W. Saitoh, Jun Nishiyama |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Superlattice Heterojunction Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Transmission electron microscopy Ionization Monolayer Materials Chemistry Optoelectronics Energy filtered transmission electron microscopy Electrical and Electronic Engineering Atomic physics business Molecular beam |
| Zdroj: | Solid-State Electronics. 42:1627-1630 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(98)00083-5 |
| Popis: | We propose a technique for growing a multilayered superlattice consisting of several monolayers of CaF 2 /CdF 2 on a Si(111) substrate using a partially ionized beam technique at 50°C. This technique should be suitable for use in Si based quantum effect devices using CaF 2 , CdF 2 , and CoSi 2 heterostructures on a Si substrate. Ionization and acceleration were performed for CaF 2 evaporation to reduce the required growth temperature using a partially ionized CaF 2 molecular beam generated by electron bombardment. The surface morphology and sharpness of the heterointerface were improved by the proposed technique as demonstrated by atomic force microscopy, the lattice image of transmission electron microscopy and satellite peaks of X-ray diffractometory. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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