SEGR and SEB in n-channel power MOSFETs

Autor:	C.F. Wheatley, Eric Lorfevre, C. Dachs, M. Allenspach, J.-M. Palau, Jeffrey L. Titus, G.H. Johnson, Kenneth F. Galloway, Ronald D. Schrimpf, J.R. Brews
Rok vydání:	1996
Předmět:	Nuclear and High Energy Physics Materials science Nuclear Energy and Engineering business.industry MOSFET Hardening (metallurgy) Electrical engineering N channel Optoelectronics Electrical and Electronic Engineering Power MOSFET business
Zdroj:	IEEE Transactions on Nuclear Science. 43:2927-2931
ISSN:	1558-1578 0018-9499
Popis:	For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d9fbd2ec1215bdd677105caf6bd7dac https://doi.org/10.1109/23.556887 Zobrazit plný text záznamu