2-μm InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes
| Autor: | Nathan J. Withers, Marek Osinski, Ron Kaspi, Gennady A. Smolyakov, Hongjun Cao |
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| Rok vydání: | 2006 |
| Předmět: |
Fabrication
Materials science business.industry Physics::Optics chemistry.chemical_element Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Optics chemistry law Optoelectronics Gallium business Quantum well Light-emitting diode Molecular beam epitaxy Diode |
| Zdroj: | 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. |
| Popis: | We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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