Galvanic Deposition of Gold on GaAs: A Tip-Induced Lithography Approach
| Autor: | Ravi Gaikwad, Thomas Thundat, Stojan S. Djokić |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Atomic force microscopy Nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor Galvanic deposition Materials Chemistry Electrochemistry Galvanic cell Optoelectronics X-ray lithography Single displacement reaction business Lithography Deposition (law) |
| Zdroj: | Journal of The Electrochemical Society. 162:D486-D489 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | A lithography technique based on reduction of metal ions on localized regions of GaAs surfaces is demonstrated. In this technique, an atomic force microscopy (AFM) tip was used to create localized defect patterns on a GaAs surface while operated in air. Subsequent exposure of the semiconductor surface to an Au(III) solution results in the deposition of gold by galvanic displacement reaction on pre-patterned defect areas. Random formation of gold islands outside of the pattern is eliminated by restricting the contact time between the Au(III) solution and GaAs semiconductor to approximately 5 minutes. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.1001509jes] All rights reserved. |
| Databáze: | OpenAIRE |
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