Analysis of RHEED intensities during formations of the CaF2/Si(111) and MgO/YSi2−x/Si(100) interface
| Autor: | Andrzej Daniluk, P. Mazurek, K. Paprocki |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Reflection high-energy electron diffraction
Materials science Silicon Nucleation Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films Crystallography chemistry Fluorine Diffusion (business) Instrumentation Molecular beam epitaxy |
| Zdroj: | Vacuum. 57:229-236 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/s0042-207x(00)00128-7 |
| Popis: | We have explored the epitaxial growth of two types of insulators on silicon substrate. CaF 2 and MgO are able to block silicon diffusion to the growing surface forming stable interfaces type Si–Ca–F and MgO/YSi 2− x in molecular beam epitaxy (MBE) deposition process. We are able to establish proper condition of epitaxy for this two insulators by controlling nucleation process during formation of the interfaces in CaF 2 /Si(1 1 1) and MgO/YSi 2− x /Si(1 0 0) systems. High-perfection heteroepitaxy is possible even for early stages of the deposition process. |
| Databáze: | OpenAIRE |
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