Strain distribution in Mg x Zn 1-x O layers with various content of Mg grown on a -plane sapphire by plasma-assisted molecular beam epitaxy
| Autor: | A. Wierzbicka, J. Dyczewski, M.A. Pietrzyk, Adrian Kozanecki, J.M. Sajkowski, Anna Reszka |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Materials science Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces General Chemistry Plasma Zinc 021001 nanoscience & nanotechnology Condensed Matter Physics Rutherford backscattering spectrometry Epitaxy 01 natural sciences Surfaces Coatings and Films Crystallography chemistry 0103 physical sciences X-ray crystallography Sapphire 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. 404:28-33 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2017.01.218 |
| Popis: | Dependence of strain distribution on Mg concentration in MgxZn1-xO layers on a-plane sapphire substrate grown by plasma-assisted molecular beam epitaxy was examined. Accurate determination of lattice parameters was performed using high resolution X-ray diffraction technique. Concentration of Mg was established by Rutherford backscattering spectrometry. These results show the non-linear relationship between the lattice parameters and Mg concentration. We observe the gradual gain of strain with the increase of Mg content in MgxZn1-xO layers, in particular in c-direction. Besides epitaxial layers on a-plane sapphire are biaxially strained similar to layers on c-plane sapphire. |
| Databáze: | OpenAIRE |
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