Planar native‐oxide AlxGa1−xAs‐GaAs quantum well heterostructure ring laser diodes

Autor:	Robert D. Burnham, Nick Holonyak, F. A. Kish, Steven A Maranowski, S. J. Caracci, S. C. Smith
Rok vydání:	1992
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Physics::Optics Ring laser Heterojunction Laser Semiconductor laser theory law.invention law Continuous wave Optoelectronics Quantum efficiency business Quantum well Diode
Zdroj:	Applied Physics Letters. 60:1582-1584
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.107258
Popis:	Native‐oxide planar AlxGa1−xAs‐GaAs quantum well heterostructure ring laser diodes (25‐μm‐ wide annulus, 250‐μm inside diameter, 300‐μm outside diameter) are demonstrated. The curved cavities (full‐ring, half‐ring, and quarter‐ring) are defined by native oxidation (H2O vapor+N2 carrier gas, 450 °C) of the entire upper confining layer inside and outside of the annulus. The native oxide provides current confinement and a sufficiently large lateral index step, and thus photon confinement, to support laser oscillation along the ring. Half‐ring laser diodes fabricated in a self‐aligned geometry exhibit continuous wave (cw) 300‐K thresholds as low as ∼105 mA (∼500‐μm circular cavity length), high total external differential quantum efficiencies (∼49%), and cw output powers of ≳40 mW.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d6726041370b4c527c2341b4a1dc877 https://doi.org/10.1063/1.107258 Zobrazit plný text záznamu