Effect of an Oxidized Metallic Zn Buffer Layer on the Morphological, Optical, Electrical, and Photoresponse Properties of Spin-coated ZnO Films
| Autor: | Woosung Jeon, Jae-Young Leem |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Photoluminescence Band gap Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Zinc 021001 nanoscience & nanotechnology 01 natural sciences Metal Full width at half maximum chemistry visual_art 0103 physical sciences visual_art.visual_art_medium Transmittance Thin film 0210 nano-technology Sol-gel |
| Zdroj: | Journal of the Korean Physical Society. 72:1243-1248 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.72.1243 |
| Popis: | We studied the morphological, optical, electrical, and photoresponse properties of ZnO thin films grown by using the sol-gel spin-coating method on Zn buffer layers oxidized at different temperatures ranging from 300 to 600 °C. With increasing the oxidation temperature, the surface morphology changed from granular to a cluster of aggregates. In the photoluminescence spectra, the highest ratio of the intensities of the near-band-edge to the deep-level emission and the lowest value of the full width at half maximum were observed at an oxidation temperature of 300 °C. The ZnO thin film grown on the Zn buffer layer oxidized at a temperature of 300 °C showed the highest values of transmittance in the visible region. The optical band gap was blue-shifted with decreasing oxidation temperature from 400 to 300 °C, and the lowest Urbach energy was observed at an oxidation temperature of 300 °C. In the study of the photoresponse properties, the fastest response/recovery rate and the highest photosensitivity were obtained for the sample prepared at an oxidation temperature of 300 °C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink