3 µm thick GaSb membrane diodes integrated with CVD diamond heat spreaders for thermally managed TPV cells

Autor:	Sadhvikas Addamane, Emma J. Renteria, D. M. Shima, C. P. Hains, Ganesh Balakrishnan
Rok vydání:	2015
Předmět:	chemistry.chemical_compound Membrane Materials science chemistry business.industry Soldering Optoelectronics Substrate (electronics) Chemical vapor deposition business Gallium arsenide Diode Voltage
Zdroj:	2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
DOI:	10.1109/pvsc.2015.7356234
Popis:	We demonstrate the integration of 3µm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etching. Electrical characterization shows good diode behavior with a turn on voltage of 0.5 V and a reverse-bias leakage current of 1.12 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d5e9939934f4e324bf0e31c93ead38c https://doi.org/10.1109/pvsc.2015.7356234 Zobrazit plný text záznamu