Monolithic GaAs PHEMT MMICs integrated with high performance MEMS microrelays

Autor:	John A. Higgins, J.J. Yao, J.F. DeNatale, Emilio A. Sovero, J.H. Hong, Robert E. Mihailovich, D.S. Deakin
Rok vydání:	2003
Předmět:	Microelectromechanical systems Materials science business.industry Electrical engineering High-electron-mobility transistor Gallium arsenide Surface micromachining chemistry.chemical_compound chemistry Test structure Mmic amplifiers Insertion loss business Monolithic microwave integrated circuit
Zdroj:	1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference.
DOI:	10.1109/imoc.1999.867103
Popis:	We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build MEMS microrelays along GaAs PHEMT devices without any sacrifice in performance or yield to either device. The test structure used the switches to activate one of two X-band LNAs. The switches have an insertion loss of less than 0.3 dB up to 50 GHz while the LNAs have a gain of 20 dB and 1.1 dB NF at 9 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d590662ec7d31799e8b17af571cba1a https://doi.org/10.1109/imoc.1999.867103 Zobrazit plný text záznamu