Effect of emitter current on the properties of the collector junction in silicon and germanium transistor structures
| Autor: | Z. A. Iskenderzade, L. A. Alieva, E. S. Taptygov, E. A. Jafarova |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor General Chemical Engineering Doping Transistor Metals and Alloys Analytical chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Diffusion capacitance Capacitance law.invention Inorganic Chemistry Depletion region law Condensed Matter::Superconductivity Materials Chemistry Computer Science::Programming Languages Physics::Accelerator Physics Optoelectronics business Negative impedance converter Common emitter |
| Zdroj: | Inorganic Materials. 47:213-217 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168511030095 |
| Popis: | We have studied the effect of emitter current on the capacitance of a forward-biased collector junction in silicon and germanium transistor structures. The results demonstrate that nonequilibrium carriers in the collector junction at a nonzero emitter current are responsible for an additional capacitance and facilitate conversion of the net capacitance of the collector junction to an inductance (negative capacitance). Therefore, both the magnitude and sign of the collector capacitance can be controlled by varying the emitter current. Experimental evidence is presented that, at high emitter currents, the barrier capacitance of the collector junction in the transistor structures may both increase and decrease, depending on the nature of the junction and the doping levels in the base and collector regions. Our experimental data agree well with calculation results. |
| Databáze: | OpenAIRE |
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