High-power AlGaInN LED chips with two-level metallization

Autor:	Anton E. Chernyakov, I. P. Smirnova, L. K. Markov, M. V. Kukushkin, A. S. Pavlyuchenko, D. A. Bauman, D. A. Zakheim, G. V. Itkinson, O. V. Osipov
Rok vydání:	2014
Předmět:	Materials science business.industry Physics::Optics Optical power Heterojunction Topology (electrical circuits) Dielectric Condensed Matter Physics Chip Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optoelectronics Quantum efficiency business Flip chip Diode
Zdroj:	Semiconductors. 48:1254-1259
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782614090267
Popis:	A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the active-to-total area ratio of the heterostructure (to 78%). Numerical simulation of the current spread, employed when developing the chip topology, makes it possible to achieve high uniformity of the current distribution over the active-region area and to obtain small values of the differential resistance of the chip (0.3 Ω). Light-emitting diodes with the maximum external quantum efficiency (60%) and output optical power (542 mW) at a working pump current of 350 mA are fabricated on the basis of crystals developed in the study.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d4b794a0efdeaa85706512fadd7b5a8 https://doi.org/10.1134/s1063782614090267 Zobrazit plný text záznamu Plný text ve formátu PDF