Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

Autor:	Frank Torregrosa, Thierry Bouchet, Stéphane Morata
Rok vydání:	2009
Předmět:	Materials science Dopant business.industry Annealing (metallurgy) Mechanical Engineering chemistry.chemical_element Condensed Matter Physics Ion implantation chemistry Mechanics of Materials Aluminium Forensic engineering Optoelectronics General Materials Science business Sheet resistance
Zdroj:	Materials Science Forum. :449-452
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.615-617.449
Popis:	This paper presents a new simple hand using and fast simulator for ion implantation in 4H-SiC substrates developed by IBS for ESCAPEE European project. The modeling is divided in two parts: Empirical Depth Profile Simulator (EDPS) and Activation/Electrical Properties Simulator (AEPS). EDPS is calibrated for aluminium (Al) and nitrogen (N) implantations into 4H-SiC from SIMS measurements. Implanted dopant profile is constructed using the Pearson IV distribution. Moments of this distribution are extracted from experimental data (SIMS). This modeling takes multiple implantation and dopant diffusion into consideration. After annealing, activation properties related to the junction are predicted using AEPS. This allows prediction of sheet resistance of the implanted layer. Modeling accuracy is demonstrated by comparisons with experimental data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5d2bc940eb7ade0e0385edcd1af4319d https://doi.org/10.4028/www.scientific.net/msf.615-617.449 Zobrazit plný text záznamu