Challenges of Junction Temperature Sensing in SiC Power MOSFETs
| Autor: | J. Ortiz Gonzalez, Olayiwola Alatise |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Thermal resistance 020208 electrical & electronic engineering Gate dielectric 02 engineering and technology 01 natural sciences Threshold voltage 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Power cycling Optoelectronics Junction temperature Power semiconductor device Power MOSFET business Diode |
| Zdroj: | 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia). |
| DOI: | 10.23919/icpe2019-ecceasia42246.2019.8797281 |
| Popis: | Junction temperature sensing is an integral part of both on-line and off-line condition monitoring where direct access the bare die surface is not available. Given a defined power input, the junction temperature enables the estimation of the junction-to-case thermal resistance, which is a key indicator of packaging failure mechanisms like solder voiding and cracks. The use of temperature sensitive electrical parameters (TSEPs) has widely been proposed as a means of junction temperature sensing however, in SiC power devices there are certain challenges regarding the use of TSEPs. Bias Temperature Instability (BTI) from charge trapping in the gate dielectric causes threshold voltage drift, which in SiC affects some of the key TSEPs including ON-state resistance, body diode forward voltage as well as the turn-ON current commutation rate. This paper reviews the challenges of junction temperature sensing in SiC power devices, the impact of BTI on TSEPs and how different researchers have approached the issue of power cycling SiC power devices and modules. |
| Databáze: | OpenAIRE |
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