Modeling of Electrolyte Thermal Noise in Electrolyte-Oxide-Semiconductor Field-Effect Transistors
| Autor: | In-Young Chung, Chan Hyeong Park |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Field effect Johnson–Nyquist noise Y-factor 02 engineering and technology Electrolyte 021001 nanoscience & nanotechnology 01 natural sciences Noise (electronics) Electronic Optical and Magnetic Materials Condensed Matter::Soft Condensed Matter Noise generator 0103 physical sciences Electronic engineering Optoelectronics Flicker noise Field-effect transistor Physics::Chemical Physics Electrical and Electronic Engineering 010306 general physics 0210 nano-technology business |
| Zdroj: | JSTS:Journal of Semiconductor Technology and Science. 16:106-111 |
| ISSN: | 1598-1657 |
| DOI: | 10.5573/jsts.2016.16.1.106 |
| Popis: | Thermal noise generated in the electrolyte is modeled for the electrolyte-oxide-semiconductor field-effect transistors. Two noise sources contribute to output noise currents. One is the thermal noise generated in the bulk electrolyte region, and the other is the thermal noise from the double-layer region at the electrolyte-oxide interface. By employing two slightly-different equivalent circuits for two noise current sources, the power spectral density of output noise current is calculated. From the modeling and simulated results, the bulk electrolyte thermal noise dominates the double-layer thermal noise. Electrolyte thermal noise are computed for three different concentrations of NaCl electrolyte. The derived formulas give a good agreement with the published experimental data. |
| Databáze: | OpenAIRE |
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