Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer For Solar Cell By Hot-Wire Cvd

Autor: A. R. Middya, B. Schroeder, Chandrachur Mukherjee, Urban Weber
Rok vydání: 2001
Předmět:
Zdroj: MRS Proceedings. 664
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-664-a25.6
Popis: We report on ways to develop device quality microcrystalline silicon (μc-Si:H) intrinsic layer with high growth rate by hot-wire chemical vapor deposition (HWCVD). With combine approach of controlling impurities and moderate H-dilution [H2/SiH4 ͌ 2.5], we developed, for the first time, highly photosensitive (103 μc-Si:Hfilms with high growth rate (>1 nm/s); the microstructure of the film is found to be close to amorphous phase (fc ͌ 46 ̻± 5%). The photosensitivity systematically decreases with fc and saturates to 10 for fc> 70%. On application of these materials in non-optimized pin [.proportional]c-Si:H solar cell structure yields 700 mV open-circuit voltage however, surprisingly low fill factor and short circuit current. The importance of reduction of oxygen impurities [O], adequate passivation of grain boundary (GB) as well as presence of inactive GB of (220) orientation to achieve efficient [.proportional]c-Si:H solar cells are discussed.
Databáze: OpenAIRE
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