Vertical metal interconnect thanks to tungsten direct bonding

Autor:	Vincent Delaye, Laurent Vandroux, Etienne Grouiller, Jean Francois Lugand, Lea Di Cioccio, Maurice Rivoire, Pierric Gueguen, Laurent Clavelier
Rok vydání:	2010
Předmět:	Wire bonding Interconnection Materials science chemistry Wafer bonding Anodic bonding Metallurgy chemistry.chemical_element Direct bonding Thermocompression bonding Tungsten Composite material Metallic bonding
Zdroj:	2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
Popis:	Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bonding mechanism and temperature dependence.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5cf275814165ae83f16c83a9dc9b6131 https://doi.org/10.1109/ectc.2010.5490643 Zobrazit plný text záznamu