Variable magnetic field Hall effect measurements and analyses of high purity, Hg vacancy (p‐type) HgCdTe

Autor:	D. A. Nelson, M. C. Gold
Rok vydání:	1986
Předmět:	Electron mobility Band gap Hall effect Chemistry Vacancy defect Ionization Analytical chemistry Charge carrier Surfaces and Interfaces Electron Condensed Matter Physics Surfaces Coatings and Films Magnetic field
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:2040-2046
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.574023
Popis:	This paper reports on complete Hall characterization of Hg vacancy ( p‐type) HgCdTe with very high purity and compositional uniformity. The x‐values of the Hg1−xCdxTe samples ranged from 0.180 to 0.300 with carrier concentrations of 6×1015 to 3×1017. Each sample was of very uniform composition with Δx
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5cf232cdbc0200896f2860ee1a5c5d0b https://doi.org/10.1116/1.574023 Zobrazit plný text záznamu