High power density, high efficiency 1W SiGe power HBT for 2.4GHz power amplifier applications
| Autor: | Chwan Ying Lee, Ping Chun Yeh, Hwann-Kaeo Chiou, John Yeh, John Chern, Yi Hung Tsai, Denny Tang |
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| Rok vydání: | 2008 |
| Předmět: |
Power gain
Engineering Power-added efficiency Switched-mode power supply business.industry Amplifier Heterojunction bipolar transistor Electrical engineering Condensed Matter Physics Electronic Optical and Magnetic Materials Materials Chemistry Output impedance Electrical and Electronic Engineering business Common emitter Power density |
| Zdroj: | Solid-State Electronics. 52:745-748 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2007.11.003 |
| Popis: | In this paper, an improved layout and thermal management of eight unit-cells SiGe power HBT with emitter area of 8 × 0.6 × 10 μm 2 were designed for high power density and efficiency performance. The on-wafer power characteristics were measured using an ATN load-pull system under class-AB operation at 2.4 GHz. The power HBT achieved a 1-dB compression power ( P −1 dB ) of 27.3 dBm and a saturation output power ( P sat ) of 30 dBm which was correspond to a power density of 2.6 mW/μm 2 for the emitter area. A high peak power added efficiency (PAE max ) of up to 75% was obtained, with a power gain of 11.4 dB at a P 3-dB of 29.0 dBm. In addition, the real part of the source impedance ( R in ) was measured to be as high as 28 Ω. The impedance transfer ratio, R in / R System is only 0.56 which relaxes the need for a high quality passive component (inductor) for on-chip input matching. This advantage makes it easier for the HBT to be integrated with other silicon-based transceiver in an RF System-on-Chip (SoC) design. |
| Databáze: | OpenAIRE |
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