Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures
| Autor: | Abdellatif Elanique, H. Charifi, Abdelhakim Nafidi, Abderrazak Boutramine, Driss Barkissy, M. Massaq |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Nanostructure Materials science Condensed matter physics Band gap Superlattice Near-infrared spectroscopy 02 engineering and technology Electronic structure Gaas alas 021001 nanoscience & nanotechnology Condensed Matter Physics Lambda 01 natural sciences Atomic and Molecular Physics and Optics 0103 physical sciences General Materials Science 0210 nano-technology Electronic properties |
| Zdroj: | Journal of Low Temperature Physics. 182:185-191 |
| ISSN: | 1573-7357 0022-2291 |
| DOI: | 10.1007/s10909-015-1437-0 |
| Popis: | We report here the electronic band structures of symmetric type I GaAs ( $$d_{1}= 2.83$$ nm)/AlAs ( $$d_{2}= 2.83$$ nm) superlattice as a function of the well thickness $$d_{1}$$ and the effect of the valence band offset $$\Lambda $$ , the ratio $$d_{2}$$ / $$d_{1}$$ , and the temperature on the band gap energy, performed in the envelop function formalism. These results are compared and discussed with the experimental measurements reported in the literature. |
| Databáze: | OpenAIRE |
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