Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling
| Autor: | M.D. Manyakin, Stanislav V. Ryabtsev, Vladimir Sivakov, O. A. Chuvenkova, E. V. Parinova, E. P. Domashevskaya, O. I. Dubrovskii, S. Yu. Turishchev, S. I. Kurganskii, Ruslan Ovsyannikov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Analytical chemistry 02 engineering and technology Electronic structure Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Tin oxide 01 natural sciences Synchrotron Spectral line law.invention Condensed Matter::Materials Science Mechanics of Materials law Phase (matter) 0103 physical sciences General Materials Science 0210 nano-technology Absorption (electromagnetic radiation) Spectroscopy |
| Zdroj: | Materials Science in Semiconductor Processing. 99:28-33 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2019.04.006 |
| Popis: | The phase composition and local atomic and electronic structure of tin oxide layers have been studied by applying synchrotron X-ray absorption near edge structure spectroscopy. The linear combination analysis of the achieved results have been performed using first-principles calculated reference data for main tin-oxygen crystalline compounds. Our results suggest that proposed modelling approach successfully allows the reliable interpretation for Sn M4,5 X-ray absorption near edge spectra caused by appropriate atomic structure reconstruction and phase transformation dynamics in thermally oxidized tin oxide layers produced by magnetron sputtering. |
| Databáze: | OpenAIRE |
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