Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

Autor: E. V. Latysheva, D. A. Usanov, S. A. Nikitov, D. V. Ponomarev, A. V. Skripal
Rok vydání: 2016
Předmět:
Zdroj: Semiconductors. 50:1759-1763
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782616130091
Popis: A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n+ layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.
Databáze: OpenAIRE
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