Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals
Autor: | E. V. Latysheva, D. A. Usanov, S. A. Nikitov, D. V. Ponomarev, A. V. Skripal |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science business.industry Doping Substrate (electronics) Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics 010305 fluids & plasmas Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science Semiconductor Electrical resistivity and conductivity Condensed Matter::Superconductivity 0103 physical sciences Optoelectronics business Layer (electronics) Microwave photonics |
Zdroj: | Semiconductors. 50:1759-1763 |
ISSN: | 1090-6479 1063-7826 |
DOI: | 10.1134/s1063782616130091 |
Popis: | A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n+ layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented. |
Databáze: | OpenAIRE |
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