| Autor: |
P.R. Walsh, William Allan Lane, A.F.J. Murray |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212). |
| DOI: |
10.1109/ispsd.1998.702693 |
| Popis: |
A novel breakover diode (BOD) structure for overvoltage protection applications is proposed. The structure incorporates a surface breakdown trigger mechanism (SBTM), which facilitates the generation of a range of triggering voltages, independent of the starting material's resistivity and by modification of only a single process step. Significant reduction in the tolerance of the triggering voltage (V/sub BF/) has also been achieved. The switching point's dependence on the forward breakdown voltage has virtually been eliminated and independent control of the breakover current (I/sub BO/) is available. Prototype devices exhibit narrow breakover voltage (V/sub BO/) windows and significantly reduced leakage current (I/sub L/) ratings. Experimental results are in good agreement with simulated trends. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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