| Autor: |
Thomas Klassen, E.H. te Kaat, J.K.N. Lindner |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :655-659 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(91)95297-q |
| Popis: |
Type-A/A/A heteroepitaxial layer systems of Si/NiSi 2 /Si with thicknesses of 2.8 μm/0.5 μm/bulk have been formed by ion beam synthesis using 6 MeV 58 Ni high-dose implantation into (111)-silicon and furnace annealing. The layer systems are characterized by spreading resistance depth profiling and cross-sectional TEM. The depth distribution of NiSi 2 precipitates in the as-implanted state is shown to have a significant impact on layer formation during the anneal. From investigations at different doses it is concluded that both the wafer surface and large precipitates present after implantation or formed in the early stages of the anneal act as competing sinks for diffusing Ni atoms, resulting in a dose dependent redistribution of Ni atoms towards the sample surface and/or within the buried layer. The influence of annealing time and temperature on the structure of the deep buried layers is described. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
