35 GHzftand 26 GHzfmaxGaInP/GaAs heterojunction bipolar transistors
| Autor: | I. Beers, B. Vetanen, S.J. Prasad, C. Haynes, D. Davito, S. Park |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Power gain
Materials science business.industry Circuit design Transistor Bipolar junction transistor Heterojunction Engraving law.invention Gallium arsenide chemistry.chemical_compound chemistry law visual_art visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering business Microwave |
| Zdroj: | Electronics Letters. 28:2341-2343 |
| ISSN: | 1350-911X |
| DOI: | 10.1049/el:19921509 |
| Popis: | High gain (β = 175) 3 × 10 & μm2 GaInP &GaAs HBTs fabricated using a triple mesa etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 μA. Microwave measurements indicate the devices have 35GHz ft and 26GHz fmax. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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