Infrared Absorption by Excitons and Their Associates in Silicon

Autor:	I. P. Kretsu, B. M. Ashkinadze, I. D. Yaroshetskii, A. A. Patrin
Rok vydání:	1971
Předmět:	Silicon Chemistry Exciton Analytical chemistry chemistry.chemical_element Infrared spectroscopy Condensed Matter Physics Electronic Optical and Magnetic Materials Pulse (physics) Modulation Phase (matter) Atomic physics Absorption (electromagnetic radiation) Excitation
Zdroj:	Physica Status Solidi (b). 46:495-500
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2220460205
Popis:	The absorption of light, Λ = 1.4 μm, has been investigated in undoped silicon at T < 30 °K under powerful laser light with hω = 1.21 eV. Under these conditions the absorption modulation pulse shows two distinct decay times with τc 0.4 μs and τex. ≈ 5 to 7 μs, the proportion of either of the two components being strongly dependent on temperature and excitation intensity. The results are discussed in terms of the formation of a condensed exciton phase having a short lifetime of τc 0.4 μs. In specimens immersed in liquid He absorption oscillations induced by laser light have been observed. [Russian Text Ignored].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5cc30b503d4aa4cdb414d3c1131ebec2 https://doi.org/10.1002/pssb.2220460205 Zobrazit plný text záznamu Plný text