The electrical, optical and structural properties of InxZn1−xOy(0 x 1) thin films by combinatorial techniques

Autor: John D. Perkins, Maikel F.A.M. van Hest, Lynn Gedvilas, Brian Keyes, Dennis W. Readey, David S. Ginley, M. S. Dabney, Charles W. Teplin, Jeff Alleman, Matthew Taylor, Bobby To
Rok vydání: 2004
Předmět:
Zdroj: Measurement Science and Technology. 16:90-94
ISSN: 1361-6501
0957-0233
Popis: Indium–zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 °C and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored. A peak in conductivity with σ > 3000 (Ω cm)−1 was observed at an indium content of ~70%. The mobility exceeded 30 cm2 (V s)−1 and the carrier concentrations were greater than 8 × 1020 cm−3. Crystalline phases were observed for In concentrations less than 45% and greater than 80% with an intermediate amorphous region. The low indium content films have a zinc oxide type structure with a ZnO (002) spacing ranging from ~2.61 to 2.85 A for 4% In and 45% In, respectively. For indium contents between 82% and 95%, the In2O3 (222) spacing varied from 2.98 to 2.99 A. Regardless of the composition or the degree of crystallinity, all films showed high optical transparency with the transmission >80% across the visible spectrum.
Databáze: OpenAIRE