A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange

Autor:	H.S. Reehal, Stefan Gall, I. Sieber, J. Klein, Jens Schneider, T. Quinn, Walther Fuhs, M. Muske, Andrey Sarikov
Rok vydání:	2006
Předmět:	Silicon Annealing (metallurgy) Oxide Nucleation chemistry.chemical_element Crystal growth Condensed Matter Physics law.invention Inorganic Chemistry Crystallography chemistry.chemical_compound chemistry Chemical engineering law Aluminium Materials Chemistry Crystallization Thin film
Zdroj:	Journal of Crystal Growth. 287:423-427
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2005.11.057
Popis:	In the aluminum-induced layer exchange process polycrystalline silicon thin films can be formed on foreign substrates at low temperatures. These films exhibit a preferential (1 0 0) crystal orientation, that depends on the annealing temperature. Further, the preferential orientation is sensitive to the nature of the Al oxide layer between the Si and the Al. A model based on preferential nucleation is presented which elucidates a possible origin of the preferential (1 0 0) orientation and its sensitivity to temperature and the aluminum oxide interlayer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5cada3e0e0cdba0383af218638d0132c https://doi.org/10.1016/j.jcrysgro.2005.11.057 Zobrazit plný text záznamu Full Text from ScienceDirect