Combination of short‐range periodicity and interfacial stress effects on valence band scheme in strained MQW (GaN/AlGaN) n

Autor: Masane Kin, Hajime Asahi, Shuichi Emura, Shigehiko Hasegawa, Yi-Kai Zhou, Hironobu Tani
Rok vydání: 2010
Předmět:
Zdroj: physica status solidi c. 7:1919-1921
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200983636
Popis: We observed intense photoluminescence from the GaN well layers of the multi-quantum well consisting of GaN and Al0.24Ga0.76N with various thicknesses (about 0.8, 1.6, 2.4 nm) of the GaN well layers. The peak position of the photoluminescence largely shifts towards the higher energy and the peak intensity becomes strong enormously with the decreasing of the GaN well-layer thickness. We qualitatively discuss on the effects of the interfacial stress (strain) and the induced dielectric polarization in addition to the short-range periodicity to elucidate the observed phenomena instead of the usual explanation based on an internal electric field effect, that seems to be too intuitive and of little physical logic. The band scheme alteration is also discussed with the observed phenomena of the photoluminescence in connection with the above argument. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
Externí odkaz: