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Crystalline, Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 , BiZN thin films can be easily obtained when the films were in-situ deposited at high enough substrate temperature 450–600 °C (30 min). The optical parameters ( N = n + ik ) measured and analyzed by optical transmission spectroscopy are insensitive to the deposition parameters, provided that the films are crystalline. The dielectric properties converted from optical parameters are e ′=4.75 and Q =325. The dielectric constant of BiZN thin films in THz frequency regime, ( e ′) f·THz =32, is markedly smaller than the e ′ value of BiZN bulk materials in microwave regime, and the quality factor of the thin films is less than 20% of the bulk materials. However, the dielectric constant of the thin films in THz region is still markedly larger than that derived from optical transmission spectroscopy in optical region. |
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