| Autor: |
B.J. Sealy, K. E. Puttick, S. Moffatt, M. A. Shahid, N. J. Barrett |
| Rok vydání: |
1983 |
| Předmět: |
|
| Zdroj: |
Radiation Effects. 70:291-299 |
| ISSN: |
0033-7579 |
| DOI: |
10.1080/00337578308219224 |
| Popis: |
A multiply scanned electron beam has been used to anneal dual implants of (Ga + Se) in GaAs. The implants were performed at room temperature, the dose being 9 × 1013 ions cm2 for both gallium and selenium ions. The percentage electrical activity was found to correlate with a decrease in dislocation density with increasing exposure time and majority of dislocations were perfect, interstitial loops with Burgers vectors of a/2 ⟨110⟩. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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