A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter
| Autor: | Shiqi Ji, Xingxuan Huang, James Palmer, Leon M. Tolbert, Fred Wang, Li Zhang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Electrical engineering High voltage 02 engineering and technology Power (physics) chemistry.chemical_compound chemistry Modulation MOSFET 0202 electrical engineering electronic engineering information engineering Silicon carbide Power semiconductor device Electrical and Electronic Engineering business Pulse-width modulation Voltage |
| Zdroj: | IEEE Transactions on Power Electronics. 35:12533-12543 |
| ISSN: | 1941-0107 0885-8993 |
| DOI: | 10.1109/tpel.2020.2987962 |
| Popis: | Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. The proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|