Time-Domain Characterization of Silicon-Based Integrated Picosecond Impulse Radiators
| Autor: | Aydin Babakhani, M. Mahdi Assefzadeh, Peiyu Chen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Radiation
Materials science Silicon business.industry Terahertz radiation chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology Impulse (physics) 021001 nanoscience & nanotechnology Optics chemistry Picosecond Femtosecond 0202 electrical engineering electronic engineering information engineering Radiator (engine cooling) Optoelectronics Time domain Electrical and Electronic Engineering Oscilloscope 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Terahertz Science and Technology. 7:599-608 |
| ISSN: | 2156-3446 2156-342X |
| DOI: | 10.1109/tthz.2017.2726346 |
| Popis: | A direct time-domain characterization of silicon-based integrated picosecond impulse radiators using a femtosecond laser-gated optoelectronic sampling technique is developed. In the proposed system, a 1550 nm femtosecond laser source is used to generate an electrical trigger signal fed to a picosecond impulse radiator, and another synchronized 1550 nm femtosecond laser source is used to gate a photoconductive detector. Technical challenges are addressed to synchronize the silicon radiators with the optoelectronic sampling system. This paper presents the details of the proposed technique and characterization of 4.8 ps impulses radiated by a custom silicon chip. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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