Plasma thinning of silicon-on-insulator bonded wafers
| Autor: | P. J. Clapis, G.J. Gardopee, P. B. Mumola, L.D. Bollinger, C. B. Zarowin, A. M. Ledger |
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| Rok vydání: | 1993 |
| Předmět: |
Data density
Materials science Thinning business.industry System of measurement Process (computing) Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Plasma Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer Electrical and Electronic Engineering business Throughput (business) |
| Zdroj: | Microelectronic Engineering. 22:347-350 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(93)90184-7 |
| Popis: | The AcuThin wafer thinning process for thinning bonded SOI wafers has been described. This process combines a high-speed, high data density film thickness measurement with a highly efficient PACE process to achieve precise control of SOI film thickness and uniformity, thereby removing the last barrier to the exploitation of SOI bonded wafers for advanced device applications. Development of this process has continued since our initial announcement in 1992. Further improvements in the film thickness measurement system and PACE processing equipment have resulted in further improvements in wafer quality and throughput. The existing process equipment can thin wafers from 25 to 200 mm in diameter. High-volume automated production equipment is currently being brought on-line to meet the demand for this new material. |
| Databáze: | OpenAIRE |
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