High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

Autor:	Shinya Tsuda, Toshiaki Baba, Takao Matsuyama, Tsuyoshi Takahama, T. Sawada, Kenichiro Wakisaka
Rok vydání:	1994
Předmět:	Amorphous silicon Materials science Silicon Nanocrystalline silicon chemistry.chemical_element engineering.material Silane Amorphous solid chemistry.chemical_compound Polycrystalline silicon chemistry Chemical engineering engineering Deposition (phase transition) Thin film
Zdroj:	MRS Proceedings. 358
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-358-895
Popis:	We succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5c5d3c2cca7ef38c3f41c8d768853abe https://doi.org/10.1557/proc-358-895 Zobrazit plný text záznamu Full text from SpringerLink