Crystalline quality and photovoltaic performance of InGaAs solar cells grown on GaAs substrate with large-misoriented angle

Autor:	Fan Lei Wu, Dong-Sing Wuu, Snin Nan Lin, Hsin Her Yu, Ray-Hua Horng, Ming Chun Tseng
Rok vydání:	2012
Předmět:	Materials science business.industry Photovoltaic system chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Active layer law.invention Reciprocal lattice chemistry law Solar cell Optoelectronics Dislocation business Instrumentation Indium Diode
Zdroj:	Vacuum. 86:843-847
ISSN:	0042-207X
DOI:	10.1016/j.vacuum.2011.02.014
Popis:	This article reports the quality of In x Ga 1− x As (0 x x Ga 1− x As epilayers is determined by x-ray reciprocal space mapping (RSM). From the RSM results, the crystalline quality of In x Ga 1− x As epilayers grown with small indium composition ( x x > 0.11) due to the small strain relaxation. The crystalline quality of In x Ga 1− x As epilayer is found to strongly depend on indium content. The photovoltaic performance of p–n structure In 0.16 Ga 0.84 As solar cell shows the lower device performance, because the In x Ga 1− x As films grown on 15°-off GaAs substrate show a large strain relaxation in the active layer of solar cell. It results in dislocation defects created at the initial active layer/In x Ga 1− x As graded layer interface. The performance of In 0.16 Ga 0.84 As solar cell with p–n structure can be significantly improved by the p–i–n structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5c539b4bbb423cb945e75818c9c16d95 https://doi.org/10.1016/j.vacuum.2011.02.014 Zobrazit plný text záznamu Full Text from ScienceDirect