(Invited) Interface and Border Traps in Ge pMOSFETs

Autor:	Sarah Ashley Francis, Ronald D. Schrimpf, C. Claeys, Cher Xuan Zhang, Rajan Arora, Eddy Simoen, En Xia Zhang, Kenneth F. Galloway, Jerome Mitard, Daniel M. Fleetwood
Rok vydání:	2013
Předmět:	Materials science business.industry Doping Oxide Radiation chemistry.chemical_compound chemistry Monolayer Optoelectronics Irradiation Halo business Radiation response Noise (radio)
Zdroj:	ECS Transactions. 50:189-203
ISSN:	1938-6737 1938-5862
Popis:	We have evaluated the effects of device processing and total-ionizing-dose (TID) radiation exposure on interface and border traps in Ge pMOSFETs. The defect density of these devices before and after TID irradiation is particularly sensitive to the number of Si monolayers at the substrate-to-dielectric interface and the halo doping conditions. These differences are reflected in the on-to-off current ratios, oxide- and interface-trap charge densities, and low-frequency noise exhibited by the devices. Lower halo implant doses are preferred over higher doses. An increase in the number of Si monolayers from five to eight improves the on-to-off current ratios and radiation response. The best overall performance in a radiation environment is observed for a process with eight Si overlayers and relatively low halo implant dose.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5c51908248dfcb944e15adc3808906a7 https://doi.org/10.1149/05005.0189ecst Zobrazit plný text záznamu