Resonant‐cavity photodiode operating at 1.55 μm with Burstein‐shifted In0.53Ga0.47As/InP reflectors

Autor:	Russell D. Dupuis, Joe C. Campbell, S. S. Murtaza, R. V. Chelakara, A. G. Dentai
Rok vydání:	1996
Předmět:	Optical fiber Materials science Physics and Astronomy (miscellaneous) business.industry Photodetector Bragg's law Resonant cavity law.invention Photodiode Wavelength Optics law Optoelectronics business Absorption (electromagnetic radiation) Refractive index
Zdroj:	Applied Physics Letters. 69:2462-2464
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.117498
Popis:	Traditionally, mirror design at the wavelengths important for fiber optic systems (1.3 and 1.55 μm) has suffered from the low refractive index step available between InP and its lattice‐matched alloys; the InP/In0.53Ga0.47As combination provides the largest index step, but at λ=1.55 μm absorption in the In0.53Ga0.47As layers degrades reflectivity. We have used the Burstein shift in n+:In0.53Ga0.47As to reduce the band‐to‐band absorption. This has yielded InP/In0.53Ga0.47As Bragg reflectors with reflectivity greater than 97%. These mirrors have been incorporated into a high‐efficiency resonant‐cavity photodetector operating at 1.55 μm.
Databáze:	OpenAIRE
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