A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design
| Autor: | G. Knoblinger, H. Tiebout, P. Klein |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Engineering
business.industry Spice Transistor Y-factor Hardware_PERFORMANCEANDRELIABILITY Noise (electronics) Low-noise amplifier law.invention Computer Science::Hardware Architecture CMOS law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Flicker noise Electrical and Electronic Engineering business |
| Zdroj: | IEEE Journal of Solid-State Circuits. 36:831-837 |
| ISSN: | 0018-9200 |
| DOI: | 10.1109/4.918922 |
| Popis: | In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a low noise amplifier in the gigahertz range. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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