Role of recovery anneals for chemical solution deposition (CSD) based SrBi2Ta2O9 (SBT) thin films

Autor: Vikram Joshi, Volker Weinrich, Gary F. Derbenwick, Nicolas Nagel, Günther Schindler, Manfred Engelhardt, Christine Dehm, Carlos Mazure, Walter Hartner, Narayan Solayappan
Rok vydání: 1998
Předmět:
Zdroj: Integrated Ferroelectrics. 22:23-33
ISSN: 1607-8489
1058-4587
DOI: 10.1080/10584589808208026
Popis: Using a recovery anneal after deposition of the Pt top electrode and patterning the Platinum / SrBi2Ta2O9 bilayer has been established to obtain well shaped hysteresis curves with low leakage currents. Electrical properties of SBT test capacitors in dependence of temperature and time for the recovery anneal are discussed. Evidence for degradation of the electrical properties of SBT capacitors after patterning due to the appearance of a new unknown peak in X-ray diffraction (XRD) is presented.
Databáze: OpenAIRE