Nonlinearity of the Absorption Coefficient in Near IR within Mind Cells
| Autor: | Raddenzati, A., Kuznicki, Z.T., Hosatte, M., Haeberlé, O. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-2cv.3.12 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 1529-1532 Multi-Interface Novel Device (MIND) is a new type concept of solar cells using a low-energy electron multiplication technique based on a nanoscale a-Si-layered system buried inside the heavily P-doped Si wafer. The a-Si layer generates a metamaterial at the a-Si/c-Si interface and splits the emitter in two parts: the lower emitter working like a classical cell, and the upper one, where a high-density electrons gas is confined. Free-carriers generated within the upper emitter cannot be collected. Experimental results of MIND cell efficiency measurements have shown that there is a nonlinearity of the quantum efficiency due to the variation of the incident light flux intensity in near-IR range (900 nm - 1050 nm). Indeed, the concentration inside the upper emitter of free-carrier increases and intensifies the free-carriers absorption coefficient within near-IR range. This effect prevents the primary electron generations in the lower emitter and then affects the yield of MIND cells. |
| Databáze: | OpenAIRE |
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